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GA20SICP12-263

Part Number	GA20SICP12-263
Manufacturer	GeneSiC
Description	Silicon Carbide Junction Transistor/Schottky Diode
Published	Jun 14, 2018
Detailed Description	Silicon Carbide Junction Transistor/Schottky Diode Co-pack Features  175 °C maximum operating temperature  Temperatu...
Datasheet	GA20SICP12-263 PDF File

Overview

Silicon Carbide Junction Transistor/Schottky Diode Co-pack Features  175 °C maximum operating temperature  Temperature independent switching performance  Gate oxide free SiC switch  Integrated SiC Schottky Rectifier  Positive temperature coefficient for easy paralleling  Low intrinsic device capacitance  Low gate charge Advantages  Low switching losses  High circuit efficiency  High temperature operation  High short circuit withstand capability  Reduced cooling requirements  Reduced system size Package  RoHS Compliant D GA20SICP12-263 VDS VDS(ON) ID RDS(ON) = = = = 1200 V 1.
4 V 20 A 70 mΩ GDS TO-263 Applications  Down Hole Oil Drilling, Geothermal Instrumentation  Hybrid Electric Vehicles (HEV)  Solar Inverters  Switched-Mode Power Supply (SMPS)  Power Factor Correction (PFC)  Induction Heating  Uninterruptible Power Supply (UPS)  Motor Drives Maximum Ratings at Tj = 175 °C, unless otherwise specified P...

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GA20SICP12-263 Silicon Carbide Junction Transistor/Schottky Diode - GeneSiC

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