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BGA5L1BN6

Infineon
Part Number BGA5L1BN6
Manufacturer Infineon
Description 18dB High Gain Low Noise Amplifier
Published Jun 18, 2018
Detailed Description BGA5L1BN6 BGA5L1BN6 18dB High Gain Low Noise Amplifier for LTE Lowband Features • Operating frequencies: 600 - 1000 MH...
Datasheet PDF File BGA5L1BN6 PDF File

BGA5L1BN6
BGA5L1BN6

Overview
BGA5L1BN6 BGA5L1BN6 18dB High Gain Low Noise Amplifier for LTE Lowband Features • Operating frequencies: 600 - 1000 MHz • Insertion power gain: 18.
5 dB • Insertion Loss in bypass mode: 2.
7 dB • Low noise figure: 0.
7 dB • Low current consumption: 8.
2 mA • Multi-state control: Bypass- and high gain-Mode • Ultra small TSNP-6-10 leadless package • RF output internally matched to 50 Ohm • Low external component count 0.
7 x 1.
1 mm2 Application The LTE data rate can be significantly improved by using the Low Noise Amplifier.
The integrated bypass function increases the overall system dynamic range and leads to more flexibility in the RF front-end.
In high gain mode the LNA offers best Noise Fig...


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