DatasheetsPDF.com

VST008N03MS

Part Number	VST008N03MS
Manufacturer	Vanguard Semiconductor
Description	N-Channel Advanced Power MOSFET
Published	Jun 19, 2018
Detailed Description	VST008N03MS 30V/90A N-Channel Advanced Power MOSFET Features Low On-Resistance Fast Switching 100% Avalanche Tested ...
Datasheet	VST008N03MS PDF File

Overview

VST008N03MS 30V/90A N-Channel Advanced Power MOSFET Features Low On-Resistance Fast Switching 100% Avalanche Tested Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Description VST008N03MS designed by the trench processing techniques to achieve extremely low on-resistance.
Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating .
These features combine to make this design an extremely efficient and reliable device for use in Motor applications and a wide variety of other applications.
Absolute Maximum Ratings Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device.
These are stress ratings only;and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied.
Exposure to absolute-maximum-rated conditions for extended periods may affect device reliabilit...

Similar Datasheet

VST008N03MS N-Channel Advanced Power MOSFET - Vanguard Semiconductor

@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)