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VSD007N07MS

Vanguard Semiconductor
Part Number VSD007N07MS
Manufacturer Vanguard Semiconductor
Description N-Channel Advanced Power MOSFET
Published Jun 19, 2018
Detailed Description Features  N-Channel，5V Logic Level Control  Enhancement mode  Very low on-resistance RDS(on) @ VGS=4.5 V  VitoMOS® T...
Datasheet PDF File VSD007N07MS PDF File

VSD007N07MS
VSD007N07MS

Overview
Features  N-Channel，5V Logic Level Control  Enhancement mode  Very low on-resistance RDS(on) @ VGS=4.
5 V  VitoMOS® Technology  100% Avalanche test  Pb-free lead plating; RoHS compliant VSD007N07MS 70V/65A N-Channel Advanced Power MOSFET V DS R @DS(on),TYP VGS=10 V R @DS(on),TYP VGS=4.
5 V ID 70 V 6.
3 mΩ 7.
5 mΩ 65 A TO-252 Part ID VSD007N07MS Package Type TO-252 Marking 007N07M Tape and reel information 2500PCS/Reel Maximum ratings, at T j=25°C, unless otherwise specified Symbol Parameter V(BR)DSS IS Drain-Source breakdown voltage Diode continuous forward current ID Continuous drain current@VGS=10V IDM EAS Pulse drain current tested ① Avalanche energy, single pulsed ② TC =25°C TC =25°C TA =100°C TC =25°C ID=15A IAS Avalanche current L=0.
5mH PD Maximum power dissipation VGS Gate-Source voltage TSTG TJ Storage and operating temperature range Thermal Characteristics TA =25°C Symbol R JC R JA Parameter Thermal Resistance-Jun...


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