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VS6018BD

Vanguard Semiconductor
Part Number VS6018BD
Manufacturer Vanguard Semiconductor
Description N-Channel Advanced Power MOSFET
Published Jun 19, 2018
Detailed Description Features  N-Channel，5V Logic Level Control  Enhancement mode  Low on-resistance RDS(on) @ VGS=4.5 V  Fast Switching ...
Datasheet PDF File VS6018BD PDF File

VS6018BD
VS6018BD

Overview
Features  N-Channel，5V Logic Level Control  Enhancement mode  Low on-resistance RDS(on) @ VGS=4.
5 V  Fast Switching  100% Avalanche test  Pb-free lead plating; RoHS compliant VS6018BD 65V/85A N-Channel Advanced Power MOSFET V DS R @DS(on),TYP VGS=10 V R @DS(on),TYP VGS=4.
5 V ID 65 V 6.
5 mΩ 8.
4 mΩ 85 A TO-252 Part ID VS6018BD Package Type TO-252 Marking 6018BD Tape and reel information 2500pcs/Reel Maximum ratings, at TA =25°C, unless otherwise specified Symbol Parameter V(BR)DSS VGS Drain-Source breakdown voltage Gate-Source voltage IS Diode continuous forward current ID Continuous drain current @VGS=10V IDM Pulse drain current tested ① IDSM Continuous drain current @VGS=10V EAS Avalanche energy, single pulsed ② PD PDSM Maximum power dissipation Maximum power dissipation ③ MSL TSTG , TJ Storage and Junction Temperature Range Thermal Characteristics Symbol Parameter RJC Thermal Resistance, Junction-to-Case RJA Thermal Resista...


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