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VSB011N06MS

Vanguard Semiconductor
Part Number VSB011N06MS
Manufacturer Vanguard Semiconductor
Description N-Channel Advanced Power MOSFET
Published Jun 19, 2018
Detailed Description Features  N-Channel，5V Logic Level Control  Enhancement mode  Very low on-resistance RDS(on) @ VGS=4.5V  Fast Switch...
Datasheet PDF File VSB011N06MS PDF File

VSB011N06MS
VSB011N06MS

Overview
Features  N-Channel，5V Logic Level Control  Enhancement mode  Very low on-resistance RDS(on) @ VGS=4.
5V  Fast Switching  Pb-free lead plating; RoHS compliant VSB011N06MS 60V/50A N-Channel Advanced Power MOSFET V DS R @DS(on),TYP VGS=10V R @DS(on),TYP VGS=4.
5V ID 60 V 9 mΩ 11 mΩ 50 A TDFN3.
3x3.
3 .
Part ID VSB011N06MS Package Type TDFN3.
3x3.
3 Marking 011N06M Tape and reel information 5000pcs/Reel Maximum ratings, at T j=25 °C, unless otherwise specified Symbol Parameter V(BR)DSS IS Drain-Source breakdown voltage Diode continuous forward current ID Continuous drain current@VGS=10V IDM EAS Pulse drain current tested ① Avalanche energy, single pulsed ② TC =25°C TC =25°C TC =...


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