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VS3606ATD

Vanguard Semiconductor
Part Number VS3606ATD
Manufacturer Vanguard Semiconductor
Description N-Channel Advanced Power MOSFET
Published Jun 19, 2018
Detailed Description Features  N-Channel，5V Logic Level Control  Enhancement mode  Very low on-resistance RDS(on) @ VGS=4.5 V  100% Avala...
Datasheet PDF File VS3606ATD PDF File

VS3606ATD
VS3606ATD

Overview
Features  N-Channel，5V Logic Level Control  Enhancement mode  Very low on-resistance RDS(on) @ VGS=4.
5 V  100% Avalanche Tested  Pb-free lead plating; RoHS compliant VS3606ATD 30V/140A N-Channel Advanced Power MOSFET V DS 30 V R @DS(on),TYP VGS=10 V 3 mΩ R @DS(on),TYP VGS=4.
5V 4 mΩ I D 140 A TO-263 Part ID VS3606ATD Package Type TO-263 Marking 3606ATD Tape and reel information 1000pcs/Reel Maximum ratings, at T j=25 °C, unless otherwise specified Symbol Parameter V(BR)DSS IS Drain-Source breakdown voltage Diode continuous forward current ID Continuous drain current @VGS=10V IDM EAS Pulse drain current tested ① Avalanche energy, single pulsed ② PD Maximum power dissipation VGS Gate-Source voltage TSTG TJ Storage and operating temperature range Thermal Characteristics Symbol Parameter RθJC Thermal Resistance-Junction to Case RθJA Thermal Resistance-Junction to Ambient TC =25°C TC =25°C TC =100°C TC =25°C TC =25°C Rating 30 1...


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