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VS6412AE

Vanguard Semiconductor
Part Number VS6412AE
Manufacturer Vanguard Semiconductor
Description N-Channel Advanced Power MOSFET
Published Jun 19, 2018
Detailed Description Features  N-Channel，5V Logic Level Control  Enhancement mode  Very low on-resistance RDS(on) @ VGS=4.5 V  VitoMOS® T...
Datasheet PDF File VS6412AE PDF File

VS6412AE
VS6412AE

Overview
Features  N-Channel，5V Logic Level Control  Enhancement mode  Very low on-resistance RDS(on) @ VGS=4.
5 V  VitoMOS® Technology  100% Avalanche test  Pb-free lead plating; RoHS compliant VS6412AE 65V/30A N-Channel Advanced Power MOSFET V DS R @DS(on),TYP VGS=10 V R @DS(on),TYP VGS=4.
5 V ID 65 V 19 mΩ 22 mΩ 30 A PDFN3333 Part ID VS6412AE Package Type PDFN3333 Marking 6412AE Tape and reel information 5000PCS/Reel Maximum ratings, at TA =25°C, unless otherwise specified Symbol Parameter V(BR)DSS IS Drain-Source breakdown voltage Diode continuous forward current ID Continuous drain current@VGS=10V IDM EAS Pulse drain current tested ① Avalanche energy, single pulsed ② TC =25°C TC =25°C TC =100°C TC =25°C PD Maximum power dissipation VGS Gate-Source voltage TSTG TJ Storage and operating temperature range Thermal Characteristics Symbol Parameter TC =25°C RJC Thermal Resistance-Junction to Case RJA Thermal Resistance-Junction to ...


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