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VSD003N06HS

Vanguard Semiconductor
Part Number VSD003N06HS
Manufacturer Vanguard Semiconductor
Description N-Channel Advanced Power MOSFET
Published Jun 20, 2018
Detailed Description Features  N-Channel，10V Logic Level Control  Enhancement mode  Very low on-resistance  Fast Switching  100% Avalanc...
Datasheet PDF File VSD003N06HS PDF File

VSD003N06HS
VSD003N06HS

Overview
Features  N-Channel，10V Logic Level Control  Enhancement mode  Very low on-resistance  Fast Switching  100% Avalanche Tested  Pb-free lead plating; RoHS compliant VSD003N06HS 60V/140A N-Channel Advanced Power MOSFET V DS R @DS(on),TYP VGS=10V ID 60 V 4.
0 mΩ 140 A TO-252 Part ID VSD003N06HS Package Type TO-252 Marking 003N06H Tape and reel information 2500pcs/Reel Maximum ratings, at T j=25 °C, unless otherwise specified Symbol Parameter V(BR)DSS IS Drain-Source breakdown voltage Diode continuous forward current ID Continuous drain current@VGS=10V IDM Pulse drain current tested ① IAS Avalanche current TC =25°C TC =25°C TC =100°C TC =25°C L=0.
5mH EAS Avalanche energy, single pulsed ② PD Maximum power dissipation VGS Gate-Source voltage TSTG TJ Storage and operating temperature range Thermal Characteristics TC =25°C Symbol R JC R JA Parameter Thermal Resistance-Junction to Case Thermal Resistance Junction-Ambient Rating 60 1...


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