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VSR090N10MS

Vanguard Semiconductor
Part Number VSR090N10MS
Manufacturer Vanguard Semiconductor
Description N-Channel Advanced Power MOSFET
Published Jun 20, 2018
Detailed Description Features  N-Channel，5V Logic Level Control  Enhancement mode  Low on-resistance @ VGS=4.5 V  Fast Switching  Pb-fre...
Datasheet PDF File VSR090N10MS PDF File

VSR090N10MS
VSR090N10MS


Overview
Features  N-Channel，5V Logic Level Control  Enhancement mode  Low on-resistance @ VGS=4.
5 V  Fast Switching  Pb-free lead plating; RoHS compliant VSR090N10MS 100V/5A N-Channel Advanced Power MOSFET V DS R DS(on),typ@VGS=10V R DS(on),typ@VGS=4.
5V ID 100 V 70 mΩ 75 mΩ 5A SOT89 Part ID Package Type VSR090N10MS SOT89 Marking 090N10 Tape and reel information 3000pcs/reel Maximum ratings, at T j=25 °C, unless otherwise specified Symbol Parameter V(BR)DSS VGS Drain-Source breakdown voltage Gate-Source voltage ID Continuous drain current@VGS=10V IDM Pulse drain current tested ① PD Maximum power dissipation IS Diode Continuous Forward Current TJ Maximum Junction Temperature TSTG Storage and operating temperature range TC =25°C TA =70°C TC =25°C TC =25°C TC =25°C Thermal characteristics RJA Thermal Resistance Junction-Ambient RJC Thermal Resistance-Junction to Case Rating 100 ±20 5 3.
2 20 1.
25 5 150 -55 to 175 100 15 Unit V V A A A W A °C...


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