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VSD012N06MS

Vanguard Semiconductor
Part Number VSD012N06MS
Manufacturer Vanguard Semiconductor
Description N-Channel Advanced Power MOSFET
Published Jun 20, 2018
Detailed Description Features  N-Channel  Enhancement mode  Very low on-resistance RDS(on) @ VGS=4.5 V  Fast Switching  100% Avalanche T...
Datasheet PDF File VSD012N06MS PDF File

VSD012N06MS
VSD012N06MS

Overview
Features  N-Channel  Enhancement mode  Very low on-resistance RDS(on) @ VGS=4.
5 V  Fast Switching  100% Avalanche Tested  Pb-free lead plating; RoHS compliant VSD012N06MS 60V/55A N-Channel Advanced Power MOSFET V DS 60 V R @DS(on),TYP VGS=10 V 8.
5 mΩ R @DS(on),TYP VGS=4.
5V 10 mΩ I D 55 A TO-252 Part ID VSD012N06MS Package Type TO-252 Marking 012N06M Tape and reel information 2500pcs/Reel Maximum ratings, at T j=25 °C, unless otherwise specified Symbol Parameter V(BR)DSS IS Drain-Source breakdown voltage Diode continuous forward current ID Continuous drain current@VGS=10V IDM EAS Pulse drain current tested ① Avalanche energy, single pulsed ② TC =25°C TC =25°C TA =100°C TC =25°C L=0.
1mH IAS Avalanche Current, single pulsed ② PD Maximum power dissipation VGS Gate-Source voltage TSTG TJ Storage and operating temperature range Thermal Characteristics TA =25°C Symbol R JC R JA Parameter Thermal Resistance-Junction to Case...


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