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VSB013N04MS

Vanguard Semiconductor
Part Number VSB013N04MS
Manufacturer Vanguard Semiconductor
Description N-Channel Advanced Power MOSFET
Published Jun 20, 2018
Detailed Description Features  N-Channel  Enhancement mode  Very low on-resistance RDS(on) @ VGS=4.5 V  Fast Switching  100% Avalanche T...
Datasheet PDF File VSB013N04MS PDF File

VSB013N04MS
VSB013N04MS

Overview
Features  N-Channel  Enhancement mode  Very low on-resistance RDS(on) @ VGS=4.
5 V  Fast Switching  100% Avalanche Tested  Pb-free lead plating; RoHS compliant VSB013N04MS 40V/40A N-Channel Advanced Power MOSFET V DS 40 V R @DS(on),TYP VGS=10 V 9 mΩ R @DS(on),TYP VGS=4.
5V 11 mΩ I D 40 A TDFN3.
3x3.
3 Part ID VSB013N04MS Package Type TDFN3.
3x3.
3 Marking 013N04M Tape and reel information 5000pcs/Reel Maximum ratings, at T j=25 °C, unless otherwise specified Symbol Parameter V(BR)DSS IS Drain-Source breakdown voltage Diode continuous forward current ID Continuous drain current@VGS=10V IDM EAS Pulse drain current tested ① Avalanche energy, single pulsed ② PD Maximum powe...


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