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VSI012N03MS

Vanguard Semiconductor
Part Number VSI012N03MS
Manufacturer Vanguard Semiconductor
Description N-Channel Advanced Power MOSFET
Published Jun 20, 2018
Detailed Description Features  N-Channel  Enhancement mode  Very low on-resistance RDS(on) @ VGS=4.5 V  Fast Switching  100% Avalanche T...
Datasheet PDF File VSI012N03MS PDF File

VSI012N03MS
VSI012N03MS

Overview
Features  N-Channel  Enhancement mode  Very low on-resistance RDS(on) @ VGS=4.
5 V  Fast Switching  100% Avalanche Tested  Pb-free lead plating; RoHS compliant VSI012N03MS 30V/60A N-Channel Advanced Power MOSFET V DS R @DS(on),TYP VGS=10 V R @DS(on),TYP VGS=4.
5V ID 30 V 9 mΩ 12 mΩ 60 A TO-251 Part ID VSI012N03MS Package Type TO-251 Marking 012N03M Tape and reel information 75pcs/Tube Maximum ratings, at T j=25 °C, unless otherwise specified Symbol Parameter V(BR)DSS IS Drain-Source breakdown voltage Diode continuous forward current ID Continuous drain current@VGS=10V IDM EAS Pulse drain current tested ① Avalanche energy, single pulsed ② TC =25°C TC =25°C TC =100°C TC =25...


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