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VSI007N06MS

Vanguard Semiconductor
Part Number VSI007N06MS
Manufacturer Vanguard Semiconductor
Description N-Channel Advanced Power MOSFET
Published Jun 20, 2018
Detailed Description Features  N-Channel，5V Logic Level Control  Enhancement mode  Very low on-resistance RDS(on) @ VGS=4.5 V  Fast Switc...
Datasheet PDF File VSI007N06MS PDF File

VSI007N06MS
VSI007N06MS

Overview
Features  N-Channel，5V Logic Level Control  Enhancement mode  Very low on-resistance RDS(on) @ VGS=4.
5 V  Fast Switching  100% Avalanche test  Pb-free lead plating; RoHS compliant VSI007N06MS 60V/85A N-Channel Advanced Power MOSFET V DS 60 V R @DS(on),TYP VGS=10 V 5.
0 mΩ R @DS(on),TYP VGS=4.
5V 6.
0 mΩ I D 85 A TO-251 Part ID VSI007N06MS Package Type TO-251 Marking Tape and reel information 007N06M 75pcs/Tube Maximum ratings, at T j=25 °C, unless otherwise specified Symbol Parameter Common Ratings (TC=25°C Unless Otherwise Noted) VGS Gate-Source Voltage V(BR)DSS TJ TSTG IS Drain-Source Breakdown Voltage Maximum Junction Temperature Storage Temperature Range Diode Continuous Forward Current Mounted on Large Heat Sink ID Continuous Drain current@VGS=10V IDM Pulse Drain Current Tested ① PD Maximum Power Dissipation RJC Thermal Resistance-Junction to Case RJA Thermal Resistance Junction-Ambient Drain-Source Avalanche Ratings EAS Ava...


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