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VSO018N03MS

Vanguard Semiconductor
Part Number VSO018N03MS
Manufacturer Vanguard Semiconductor
Description N-Channel Advanced Power MOSFET
Published Jun 20, 2018
Detailed Description Features  N-Channel  Enhancement mode  Low on-resistance RDS(on) @ VGS=4.5 V  Fast Switching  Pb-free lead plating;...
Datasheet PDF File VSO018N03MS PDF File

VSO018N03MS
VSO018N03MS

Overview
Features  N-Channel  Enhancement mode  Low on-resistance RDS(on) @ VGS=4.
5 V  Fast Switching  Pb-free lead plating; RoHS compliant VSO018N03MS 30V/8A N-Channel Advanced Power MOSFET V DS R DS(on),Typ @ VGS=10 V R DS(on),Typ @ VGS=4.
5 V ID 30 V 17 mΩ 22 mΩ 8A SOP8 Part ID Package Type VSO018N03MS SOP8 Marking 018N03M Tape and reel information 3000pcs/reel Maximum ratings, at T j=25 °C, unless otherwise specified Symbol Parameter V(BR)DSS Drain-Source breakdown voltage ID Continuous drain current@VGS=10V IDM Pulse drain current tested ① PD Maximum power dissipation VGS Gate-Source voltage TC =25°C TC =100°C TC =25°C TC =25°C MSL TSTG Storage and operating temperature range Thermal characteristics Symbol Parameter Rθ JA Rθ JC Thermal Resistance Junction-Ambient Thermal Resistance-Junction to Case Rating 30 8 5.
2 32 2 ±20 Level 3 -55 to 150 Typical 62.
5 1.
55 Unit V A A A W V °C Unit °C/W °C/W Copyright Vanguard Semiconductor Co.
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