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VSO100N10MS

Vanguard Semiconductor
Part Number VSO100N10MS
Manufacturer Vanguard Semiconductor
Description N-Channel Advanced Power MOSFET
Published Jun 20, 2018
Detailed Description Features  N-Channel  Enhancement mode  Very low on-resistance @ VGS=4.5 V  Fast Switching  Pb-free lead plating; Ro...
Datasheet PDF File VSO100N10MS PDF File

VSO100N10MS
VSO100N10MS

Overview
Features  N-Channel  Enhancement mode  Very low on-resistance @ VGS=4.
5 V  Fast Switching  Pb-free lead plating; RoHS compliant VSO100N10MS 100V/6A N-Channel Advanced Power MOSFET V DS 100 V R DS(on),typ@VGS=10V 78 mΩ R DS(on),typ@VGS=4.
5V 85 mΩ ID 6 A SOP8 Part ID Package Type VSO100N10MS SOP8 Marking 100N10M Tape and reel information 3000pcs/reel Maximum ratings, at T j=25 °C, unless otherwise specified Symbol Parameter V(BR)DSS VGS Drain-Source breakdown voltage Gate-Source voltage ID Continuous drain current@VGS=10V IDM Pulse drain current tested ① PD Maximum power dissipation IS Diode Continuous Forward Current TJ Maximum Junction Temperature TSTG Storage temperature range Thermal characteristics TC =25°C TA =100°C TC =25°C TC =25°C TC =25°C RθJA Thermal Resistance Junction-Ambient RθJC Thermal Resistance-Junction to Case Rating 100 ±16 6 3.
8 24 1.
6 6 150 -55 to 175 75 43 Unit V V A A A W A °C °C °C/W °C/W Copyright Va...


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