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BC328-40

Siemens Semiconductor Group
Part Number BC328-40
Manufacturer Siemens Semiconductor Group
Description PNP Silicon AF Transistors
Published Mar 23, 2005
Detailed Description BC 327 / BC 328 PNP Si-Epitaxial PlanarTransistors General Purpose Transistors PNP 625 mW TO-92 (10D3) 0.18 g Power di...
Datasheet PDF File BC328-40 PDF File

BC328-40
BC328-40

Overview
BC 327 / BC 328 PNP Si-Epitaxial PlanarTransistors General Purpose Transistors PNP 625 mW TO-92 (10D3) 0.
18 g Power dissipation – Verlustleistung Plastic case Kunststoffgehäuse Weight approx.
– Gewicht ca.
Plastic material has UL classification 94V-0 Gehäusematerial UL94V-0 klassifiziert Standard Pinning 1=C 2=B 3=E Standard packaging taped in ammo pack Standard Lieferform gegurtet in Ammo-Pack Maximum ratings (TA = 25/C) Collector-Emitter-voltage Collector-Emitter-voltage Emitter-Base-voltage Power dissipation – Verlustleistung Collector current – Kollektorstrom (DC) Peak Coll.
current – Kollektor-Spitzenstrom Base current – Basisstrom Junction temp.
– Sperrschichttemperatur Storage temperature – Lagerungstemperatur B open B shorted C open - VCE0 - VCES - VEB0 Ptot - IC - ICM - IB Tj TS Grenzwerte (TA = 25/C) BC 327 45 V 50 V 5V 625 mW 1) 800 mA 1A 100 mA 150/C - 65…+ 150/C BC 328 25 V 30 V Characteristics, Tj = 25/C Min.
DC current gain – Kollektor-Basis-Stromverhältnis Group -16 - VCE = 1 V, - IC = 100 mA Group -25 Group -40 Group -16 - VCE = 1 V, - IC = 300 mA Group -25 Group -40 hFE hFE hFE hFE hFE hFE 100 160 250 60 100 170 Kennwerte, Tj = 25/C Typ.
160 250 400 130 200 320 Max.
250 400 630 – – – 1 ) Valid, if leads are kept at ambient temperature at a distance of 2 mm from case Gültig, wenn die Anschlußdrähte in 2 mm Abstand von Gehäuse auf Umgebungstemperatur gehalten werden 2 01.
11.
2003 General Purpose Transistors Characteristics (Tj = 25/C) Min.
Collector-Emitter cutoff current – Kollektorreststrom - VCE = 45 V - VCE = 25 V - VCE = 45 V, Tj = 125/C - VCE = 25 V, Tj = 125/C BC 327 BC 328 BC 327 BC 328 - ICES - ICES - ICES - ICES – – – – BC 327 / BC 328 Kennwerte (Tj = 25/C) Typ.
2 nA 2 nA – – Max.
100 nA 100 nA 10 :A 10 :A Collector-Emitter breakdown voltage Collector-Emitter Durchbruchspannung - IC = 10 mA - IC = 0.
1 mA Emitter-Base breakdown voltage Emitter-Basis-Durchbruchspannung - IE = 0.
1 mA - IC = 500 mA, - IB = 50 mA Base-Emitter voltage ...


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