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BC337-25

ON Semiconductor
Part Number BC337-25
Manufacturer ON Semiconductor
Description Amplifier Transistors
Published Mar 23, 2005
Detailed Description BC337, BC337-25, BC337-40 Amplifier Transistors NPN Silicon Features • These are Pb−Free Devices MAXIMUM RATINGS Ratin...
Datasheet PDF File BC337-25 PDF File

BC337-25
BC337-25

Overview
BC337, BC337-25, BC337-40 Amplifier Transistors NPN Silicon Features • These are Pb−Free Devices MAXIMUM RATINGS Rating Collector − Emitter Voltage Collector − Base Voltage Emitter − Base Voltage Collector Current − Continuous Total Device Dissipation @ TA = 25°C Derate above 25°C Symbol VCEO VCBO VEBO IC PD Value 45 50 5.
0 800 625 5.
0 Unit Vdc Vdc Vdc mAdc mW mW/°C Total Device Dissipation @ TC = 25°C Derate above 25°C PD 1.
5 W 12 mW/°C Operating and Storage Junction Temperature Range TJ, Tstg −55 to +150 °C THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction−to−Ambient RqJA 200 °C/W Thermal Resistance, Junction−to−Case RqJC 83.
3 °C/W Stresses exceeding those listed in the Maximum Ratings table may damage the device.
If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.
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