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CSP30N75

CASS
Part Number CSP30N75
Manufacturer CASS
Description N-Channel Trench Power MOSFET
Published Jun 23, 2018
Detailed Description N-Channel Trench Power MOSFET General Description The CSP30N75 uses advanced trench technology to provide excellent RDS(...
Datasheet PDF File CSP30N75 PDF File

CSP30N75
CSP30N75

Overview
N-Channel Trench Power MOSFET General Description The CSP30N75 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.
5V.
This device is suitable for use as a wide variety of applications.
Features ● VDS = 30V,ID =12A RDS(ON) < 11 mΩ @ VGS =10V RDS(ON) < 16 mΩ @ VGS =4.
5V ● High density cell design for ultra low Rdson ● Lead free product is acquired Application ● Battery protection ● Load switch ● Power management 100% UIS TESTED! CSP30N75 Schematic Diagram Marking and pin Assignment Package Marking and Ordering Information Device Marking Device Device Package CSP30N75 CSP30N75 SOP-8 Reel Size Ø330mm Table 1.
Absol...


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