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CSJ60N62

CASS
Part Number CSJ60N62
Manufacturer CASS
Description N-Channel Trench Power MOSFET
Published Jun 23, 2018
Detailed Description N-Channel Trench Power MOSFET General Description The CSJ60N62/CSJ60N62A is N-channel MOS Field Effect Transistor design...
Datasheet PDF File CSJ60N62 PDF File

CSJ60N62
CSJ60N62

Overview
N-Channel Trench Power MOSFET General Description The CSJ60N62/CSJ60N62A is N-channel MOS Field Effect Transistor designed for high current switching applications.
Rugged EAS capability and ultra low RDS(ON) is suitable for PWM, load switching.
Features ● VDS=60V；ID=80A@ VGS=10V； RDS(ON)<7.
2mΩ @ VGS=10V ● Ultra Low On-Resistance ● High UIS and UIS 100% Test Application ● Hard Switched and High Frequency Circuits ● Uninterruptible Power Supply CSJ60N62 /CSJ60N62A To-263 Top View Schematic Diagram VDS = 60 V ID = 80 A RDS(ON) = 6.
2 mΩ Package Marking and Ordering Information Device Device Marking Device Package CSJ60N62 CSJ60N62 TO-263 CSJ60N62A CSJ60N62 TO-263 Package Typ Tape&Reel Tube Table 1.
Absolute Maximum Ratings (TA=25℃) Symbol Parameter VDS Drain-Source Voltage (VGS=0V） VGS Gate-Source Voltage (VDS=0V) ID (DC) ID (DC) IDM (pluse) Drain Current (DC) at Tc=25℃ Drain Current (DC) at Tc=100℃ Drain Current-Continuous@ Current-Pulsed (Not...


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