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BC637

Part Number	BC637
Manufacturer	Motorola Inc
Description	High Current Transistors
Published	Mar 23, 2005
Detailed Description	MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by BC635/D High Current Transistors NPN Silicon COLLECTOR 2...
Datasheet	BC637 PDF File

Overview

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by BC635/D High Current Transistors NPN Silicon COLLECTOR 2 3 BASE 1 EMITTER BC635 BC637 BC639 MAXIMUM RATINGS Rating Collector – Emitter Voltage Collector – Base Voltage Emitter – Base Voltage Collector Current — Continuous Total Device Dissipation @ TA = 25°C Derate above 25°C Total Device Dissipation @ TC = 25°C Derate above 25°C Operating and Storage Junction Temperature Range Symbol VCEO VCBO VEBO IC PD PD TJ, Tstg BC 635 45 45 BC 637 60 60 5.
0 0.
5 625 5.
0 1.
5 12 – 55 to +150 BC 639 80 80 Unit Vdc Vdc Vdc Adc mW mW/°C Watt mW/°C °C 1 2 3 CASE 29–04, STYLE 14 TO–92 (TO–226AA) THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case Symbol RqJA RqJC Max 200 83.
3 Unit °C/W °C/W ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector – Emitter Breakdown Voltage(1) (IC = 10 mAdc, IB = 0)...

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