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AP2012P3C-P22

Kingbright
Part Number AP2012P3C-P22
Manufacturer Kingbright
Description Phototransistor
Published Jun 28, 2018
Detailed Description AP2012P3C-P22 2.0 x 1.25 mm Phototransistor DESCRIPTION z Made with NPN silicon phototransistor chips FEATURES z 2.0 mm ...
Datasheet PDF File AP2012P3C-P22 PDF File

AP2012P3C-P22
AP2012P3C-P22

Overview
AP2012P3C-P22 2.
0 x 1.
25 mm Phototransistor DESCRIPTION z Made with NPN silicon phototransistor chips FEATURES z 2.
0 mm x 1.
25 mm SMD LED, 1.
1 mm thickness z Mechanically and spectrally matched to the infrared emitting LED lamp z Water clear lens z Package: 2000 pcs / reel z Moisture sensitivity level: 3 z RoHS compliant APPLICATIONS z Infrared applied systems z Optoelectronic switches z Photodetector control circuits z Sensor technology PACKAGE DIMENSIONS RECOMMENDED SOLDERING PATTERN (units : mm; tolerance : ± 0.
1) Confidential ABSOLUTE MAXIMUM RATINGS at TA=25°C Notes: 1.
All dimensions are in millimeters (inches).
2.
Tolerance is ±0.
1(0.
004") unless otherwise noted.
3.
The specifications, characteristics and technical data described in the datasheet are subject to change without prior notice.
4.
The device has a single mounting surface.
The device must be mounted according to the specifications.
Parameter Max.
Ratings Units Collector-to-Emitter Voltage 30 Emitter-to-Co...


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