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DTS2012

Din-Tek
Part Number DTS2012
Manufacturer Din-Tek
Description N-Channel MOSFET
Published Jun 28, 2018
Detailed Description N-Channel 20 V (D-S) MOSFET DTS2012 www.din-tek.jp PRODUCT SUMMARY VDS (V) 20 RDS(on) () 0.037 at VGS = 4.5 V 0.041...
Datasheet PDF File DTS2012 PDF File

DTS2012
DTS2012

Overview
N-Channel 20 V (D-S) MOSFET DTS2012 www.
din-tek.
jp PRODUCT SUMMARY VDS (V) 20 RDS(on) () 0.
037 at VGS = 4.
5 V 0.
041 at VGS = 2.
5 V 0.
046 at VGS = 1.
8 V ID (A)a 4 3 2 Qg (Typ.
) 4 nC SOT-323 G1 3D S2 Top View G D S FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • Typical ESD Protection 2000 V HBM • 100 % Rg Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Portable Devices - Load Switch - Battery Switch • Load Switch for Motors, Relays and Solenoids ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS TC = 25 °C Continuous Drain Current (TJ = 150 °C) TC = 70 °C TA = 25 °C ID Pulsed Drain Current (t = 300 µs) TA = 70 °C IDM Continuous Source-Drain Diode Current TC = 25 °C TA = 25 °C IS TC = 25 °C Maximum Power Dissipation Operating Junction and Storage Temperature Range TC = 70 °C TA = 25 °C TA = 70...


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