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DTQ3309

Din-Tek
Part Number DTQ3309
Manufacturer Din-Tek
Description P-Channel MOSFET
Published Jun 28, 2018
Detailed Description P-Channel 30 V (D-S) MOSFET DTQ3309 www.din-tek.jp PRODUCT SUMMARY VDS (V) RDS(on) () Max. 0.010 at VGS = - 10 V -...
Datasheet PDF File DTQ3309 PDF File

DTQ3309
DTQ3309


Overview
P-Channel 30 V (D-S) MOSFET DTQ3309 www.
din-tek.
jp PRODUCT SUMMARY VDS (V) RDS(on) () Max.
0.
010 at VGS = - 10 V - 30 0.
014 at VGS = - 4.
5 V ID (A) - 50d - 40d DFN 3x3 EP Top View Bottom View Qg (Typ.
) 43.
1 nC FEATURES • TrenchFET® Power MOSFET • Low On-Resistance for Low Voltage Drop • 100 % Rg and UIS Tested APPLICATIONS • Battery, Load and Adaptor Switches - Notebook Computers - Notebook Battery Packs S Pin 1 Top View 18 27 36 45 G D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS TC = 25 °C Continuous Drain Current (TJ = 150 °C) TC = 70 °C TA = 25 °C ID Pulsed Drain Current (t = 100 µs) TA = 70 °C IDM Continuous Source-Drain Diode Current Avalanche Current Single-Pulse Avalanche Energy TC = 25 °C TA = 25 °C L = 0.
1 mH IS IAS EAS TC = 25 °C Maximum Power Dissipation TC = 70 °C TA = 25 °C PD Operating Junction and Storage Tempera...



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