DatasheetsPDF.com

2N6851

Part Number	2N6851
Manufacturer	TEMIC
Description	P-Channel Enhancement-Mode Transistor
Published	Jul 6, 2018
Detailed Description	P-Channel Enhancement-Mode Transistor Product Summary V(BR)DSS (V) –200 rDS(on) (W) 0.80 ID (A) –4.0 Parametric lim...
Datasheet	2N6851 PDF File

Overview

P-Channel Enhancement-Mode Transistor Product Summary V(BR)DSS (V) –200 rDS(on) (W) 0.
80 ID (A) –4.
0 Parametric limits in accordance with MIL-S-19500/564 where applicable.
TO-205AF (TO-39) S S 1 G 2N6851 2 G 3 D Top View D P-Channel MOSFET Absolute Maximum Ratings (TC = 25_C Unless Otherwise Noted) Drain-Source Voltage Gate-Source Voltage Parameter Continuous Drain Current (TJ = 150_C) Pulsed Drain Current Avalanche Current Maximum Power Dissipation Operating Junction and Storage Temperature Range Lead Temperature (1/16” from case for 10 sec.
) TC = 25_C TC = 100_C TC = 25_C TC = 100_C Thermal Resistance Ratings Symbol VDS VGS ID IDM IAR PD TJ, Tstg TL Limit –200 "20 –...

Similar Datasheet

2N6800 N-CHANNEL POWER MOSFET - Seme LAB
2N6800 N-CHANNEL MOSFET - Microsemi
2N6802 N-CHANNEL MOSFET - Microsemi
2N6802 N-CHANNEL ENHANCEMENT MODE POWER MOSFET - Seme LAB
2N6804 TRANSISTORS - International Rectifier
2N6804 P-CHANNEL MOSFET - Microsemi
2N681 Thyristors - RCA
2N681 25 and 35 Amp RMS SCRs - International Rectifier
2N681 silicon controlled rectifiers - Motorola
2N681 SILICON CONTROLLED RECTIFIER - Digitron Semiconductors

Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)