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2N6800

Seme LAB
Part Number 2N6800
Manufacturer Seme LAB
Description N-CHANNEL POWER MOSFET
Published Mar 22, 2005
Detailed Description LAB MECHANICAL DATA Dimensions in mm (inches) 8 .8 9 (0 .3 5 ) 9 .4 0 (0 .3 7 ) SEME 2N6800 N–CHANNEL POWER MOSFET BV...
Datasheet PDF File 2N6800 PDF File

2N6800
2N6800


Overview
LAB MECHANICAL DATA Dimensions in mm (inches) 8 .
8 9 (0 .
3 5 ) 9 .
4 0 (0 .
3 7 ) SEME 2N6800 N–CHANNEL POWER MOSFET BVDSS ID RDS(on) 400V 3.
0A 1.
0W 7 .
7 5 (0 .
3 0 5 ) 8 .
5 1 (0 .
3 3 5 ) 6 .
1 0 (0 .
2 4 0 ) 6 .
6 0 (0 .
2 6 0 ) 1 2 .
7 0 (0 .
5 0 0 ) m in .
0 .
8 9 m a x .
(0 .
0 3 5 ) 7 .
7 5 (0 .
3 0 5 ) 8 .
5 1 (0 .
3 3 5 ) d ia .
5 .
0 8 (0 .
2 0 0 ) ty p .
 0 .
6 6 (0 .
0 2 6 ) 1 .
1 4 (0 .
0 4 5 ) 0 .
7 1 (0 .
0 2 8 ) 0 .
8 6 (0 .
0 3 4 ) ! 2 .
5 4 (0 .
1 0 0 ) FEATURES • AVALANCHE ENERGY RATED • HERMETICALLY SEALED • DYNAMIC dv/dt RATING 4 5 ° TO39 – Package Pin 1 – Source Pin 2 – Gate Pin 3 – Drain Also available in a low profile version.
• SIMPLE DRIVE REQUIREMENTS ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) VGS ID ID IDM PD dv/dt TJ , Tstg RqJC RqJCA Gate – Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current 1 Power Dissipation @ Tcase = 25°C Linear Derating Factor Peak Diode Recovery 3 ±20V (VGS = 10V , Tcase = 25°C) (VGS = 10V , Tcase = 100°C) 3A 2A 12A 25W 0.
20W/°C 4V/ns –55 to 150°C 5.
0°C/W 175°C/W Operating and Storage Temperature Range Thermal Resistance Junction to Case Thermal Resistance Junction-to-Ambient Notes 1) Pulse Test: Pulse Width £ 300ms, d £ 2% 2) @ VDD = 50V , L ³ 0.
100mH , RG = 25W , Peak IL = 1.
5A , Starting TJ = 25°C 3) @ ISD £ 1.
5A , di/dt £ 50A/ms , VDD £ BVDSS , TJ £ 150°C , SUGGESTED RG = 7.
5W Semelab plc.
Telephone +44(0)1455 556565.
Fax +44(0)1455 552612.
E-mail: sales@semelab.
co.
uk Website: http://www.
semelab.
co.
uk 9/00 LAB ELECTRICAL CHARACTERISTICS (Tamb = 25°C unless otherwise stated) Parameter BVDSS STATIC ELECTRICAL RATINGS Drain – Source Breakdown Voltage SEME 2N6800 Test Conditions VGS = 0 ID = 1mA VGS = 10V VGS = 10V VDS = VGS VDS ³ 15V VGS = 0 VGS = 20V VGS = –20V VGS = 0 VDS = 25V f = 1MHz VGS = 10V ID = 3A ID = 2A ID = 3A ID = 250mA IDS = 2A TJ = 125°C ID = 1mA Min.
400 Typ.
Max.
Unit V DBVDSS Temperature Coefficient of DTJ Breakdown Voltage RDS(on) Static...


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