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2N6410

ETC
Part Number 2N6410
Manufacturer ETC
Description 4A POWER TRANSISTORS
Published Jul 11, 2018
Detailed Description 2N6410 NPN (SILICON) 2N6411 PNP COMPLEMENTARY SILICON ANNULAR POWER PLASTIC TRANSISTORS .. designed for low voltage. lo...
Datasheet PDF File 2N6410 PDF File

2N6410
2N6410

Overview
2N6410 NPN (SILICON) 2N6411 PNP COMPLEMENTARY SILICON ANNULAR POWER PLASTIC TRANSISTORS .
.
designed for low voltage.
low·power.
high·gain audio amplifier applications.
• Collector· Emitter Sustaining Voltage - VCEO(sus) = 25 Vdc (Min) @ IC = 10 mAdc • High DC Current Gain - hFE = 70 (Min) @ IC = 500 mAdc = 45 (Min) @ IC = 2.
0 Adc = 10 (Min) @ IC = 4.
0 Adc • Low Collector· Emitter Saturation Voltage VCE(sat) = 0.
35 Vdc (Max) @ IC = 500 mAdc = 0.
8 Vdc (Max) @ IC = 2.
0 Adc • High Current·Gain - Bandwidth Product - tr = 50 MHz (Min) @ IC = 100 mAdc • Pin Compatible with TO·220AB Package 'MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Cu rrent - Continuous Peak Base Current Total Power Dissipation @TC':: 25°C Derate above 25°C Operating and Storage Junction Temperature Range THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case • Indicates JEDEC Registered Data.
Symbol VCEO VCBO VEB IC IB Po...


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