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2N6444

ETC
Part Number 2N6444
Manufacturer ETC
Description NPN SILICON MONOLITHIC MULTIPLE TRANSISTORS
Published Jul 11, 2018
Detailed Description 2N6441 (SILICON) thru 2N6448 MULTIPLE SILICON ANNULAR MONOLITHIC TRANSISTORS ... designed for use as differential amplif...
Datasheet PDF File 2N6444 PDF File

2N6444
2N6444

Overview
2N6441 (SILICON) thru 2N6448 MULTIPLE SILICON ANNULAR MONOLITHIC TRANSISTORS .
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designed for use as differential amplifiers, dual general-purpose amplifiers, front end detectors and temperature compensation" applications.
• Excellent Temperature Tracking - 2N6445 thru 2N6448 "'IVBEl - VBE21 = 0.
8 mVdc (Maxi @-55 to +250 C = 1.
0 mVdc (Maxi @+25 to +1250 C • Low Collector-Emitter Saturation Voltage - VCE(satl = 0.
1 Vdc (Typl @ IC = 1.
0 mAdc • DC Current Gain Specified - 10 !lAdc to 1.
0 mAdc • High Current-Gain-Bandwidth Product- fT = 500 MHz (Typl @ IC = 0.
5 mAdc NPN SILICON MONOLITHIC MULTIPLE TRANSISTORS 'MAXIMUM RATING Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Contmuous Total Power DiSSipation @ T A = 25°C Derate above 25°C Total Power DIssipation @TC = 25°C Derate above 25°C Operatmg and Storage Junction Temperature Range (1) One die or both die with equal power THERMAL CHARACTERISTICS Characteristic Thermal Resist...


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