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2N6365

Part Number	2N6365
Manufacturer	ETC
Description	PNP GERMANIUM RF AMPLIFIER TRANSISTORS
Published	Jul 12, 2018
Detailed Description	2N636S,2N636SA (GERMANIUM) PNP GERMANIUM RF AMPLIFIER TRANSISTORS · .. designed for use in high gain RF amplifier appli...
Datasheet	2N6365 PDF File

Overview

2N636S,2N636SA (GERMANIUM) PNP GERMANIUM RF AMPLIFIER TRANSISTORS · .
.
designed for use in high gain RF amplifier applications.
• Coliector·Emitter Breakdown Voltage - BVCES = 25 Vdc (Min) @ IC = 200l1Adc • High Power Gain Gpe = 30 dB (Typ) @ VCE = 6.
0 Vdc.
f = 10 MHz • Low Collector·Base Capacitance Ccb = 2.
0 pF (Max) @VCB= 10 Vdc PNP GERMANIUM RF AMPLIFIER TRANSISTORS 'MAXIMUM RATINGS Rating Collector-Emitter Voltage (1) Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous Total Power Dissipation @ TA = 25°C Derate above 25°C Operating and Storage Junction Temperature Range Symbol VCEO VCB VEB IC Po TJ.
Tstg Value 10 30 1.
0 100 150 2.
0 -65 to +100 Unit Vdc Vdc Vd...

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