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2N6367

Part Number	2N6367
Manufacturer	ETC
Description	NPN SILICON RF POWER TRANSISTOR
Published	Jul 12, 2018
Detailed Description	2N6367 (SILICON) The RF Line NPN SILICON RF POWER TRANSISTOR · . . designed primarily for driver applications in 12.5 v...
Datasheet	2N6367 PDF File

Overview

2N6367 (SILICON) The RF Line NPN SILICON RF POWER TRANSISTOR · .
.
designed primarily for driver applications in 12.
5 volt single~ideband amplifiers from 2.
0 to 30 MHz.
• Optimized for Operation from a 12:5 Volt Supply • Power Output@ 12.
5 Vdc, 30 MHz -:-H.
O W (PEP) • Intermodulation Distortion at Ra.
ted Powe, Output- IMD .
= -30 dB (Max) 9 W (PEP) - 30 MHz RF POWER ,TRANSISTOR NPN SILICON "MAXIMUM RATINGS ,.
Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous' Total Device Dissipation @ T C - 2SoC Derate above 2SoC Storage Temperature Range' *Indicates JEDEC Registered Da~a.
Symbol VCEO VCBO VEBO IC Po T stg Value 18 36 4.
0 2.
0 20 ...

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