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2N6279

Part Number	2N6279
Manufacturer	ETC
Description	HIGH-POWER NPN SILICON TRANSISTORS
Published	Jul 12, 2018
Detailed Description	2N 6278 thru 2N 6281 (SILICON) HIGH-POWER NPN SILICON TRANSISTORS designed for use in industrial-military power amplifi...
Datasheet	2N6279 PDF File

Overview

2N 6278 thru 2N 6281 (SILICON) HIGH-POWER NPN SILICON TRANSISTORS designed for use in industrial-military power amplifier and switching circuit applications.
• High Collector Emitter Sustaining Voltage VCEO(sus) = 100 Vdc (Min) - 2N6278 = 120 Vdc (Min) - 2N6279 = 140 Vdc (Min) - 2N6280 = 150 Vdc (Min) - 2N6281 • High DC Current Gain hFE = 30-120@ IC = 20 Adc = 10 (Min) @ IC = 50 Adc • Low Coliector·Emitter Saturation Voltage VCE(sat) = 1.
2 Vdc (Max) @ IC = 20 Adc • Fast Switching Times @ IC = 20 Adc tr = 0.
351ls (Max) ts = 0.
8 Ils (Max) tf = 0.
25 Ils (Max) 'MAXIMUM RATINGS Rating Svmbol Collector-Base Voltage VeB Collector-Emitter Voltage VeEO Emitter-Base Voltage VEB Collector Cu...

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