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2N5845

Part Number	2N5845
Manufacturer	ETC
Description	NPN SILICON ANNULAR TRANSISTORS
Published	Jul 13, 2018
Detailed Description	2N5845 (SILICON) 2N5845A NPN SILICON ANNULAR TRANSISTORS . designed for high·current saturated switching and core drive...
Datasheet	2N5845 PDF File

Overview

2N5845 (SILICON) 2N5845A NPN SILICON ANNULAR TRANSISTORS .
designed for high·current saturated switching and core driver applications.
• Fast Switching Times@ IC = 500 mAde ton = 30 ns (Max) - 2N5845A 40 ns (Max) - 2N5845 toff = 50 ns (Max) - 2N5845A 60 ns (Max) - 2N5845 • High Current Gain - Bandwidth Product fT = 250 MHz (Min) - 2N5845A 200 MHz (Min) - 2N5845 • Low Collector-Emitter Saturation Voltage - @ IC = 500 mAde VCE(sat) = 0.
5 Vdc (Max) - 2N5845A 0.
6 Vdc (Max) - 2N5845 NPN SILICON SWITCHING TRANSISTORS *MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous Total Power Dissipation @ TA ::::I 25°C Derate above 2SoC T9tal Power Dissipation @ TC ::: 26°C Derate above 25°C Operating and Storage Junction Temperature Range Symbol VCEO VeB VEB IC Po Po TJ,Tstg Value 40 50 6.
0 1.
0 625 5.
0 1.
5 12 -55 to +150 Unit Vdc Vdc Vdc Adc mW mW/oC Watt mW/oC °c THERMAL CHARACTERISTICS Characteristic Thermal R...

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