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2N5849

Part Number	2N5849
Manufacturer	ETC
Description	NPN SILICON RF POWER TRANSISTOR
Published	Jul 13, 2018
Detailed Description	2N5849 (SILICON) NPN SILICON RF POWER TRANSISTOR · .. designed primarily for use in large·signal amplifier output stage...
Datasheet	2N5849 PDF File

Overview

2N5849 (SILICON) NPN SILICON RF POWER TRANSISTOR · .
.
designed primarily for use in large·signal amplifier output stages, the 2N5849 is intended for use in industrial communications equip· ment operating at frequencies to 80 MHz.
• Optimized for Operation from a 12.
5 Volt Supply • 40 Watts (Min) RF Power Output at 50 MHz • Balanced Emitter Construction for Burn Out Protection 40W-50 MHz RF POWER TRANSISTOR NPN SILICON 'MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Continuous Total Device Dissipation @TC - 25°C Derate above 25°C Storage Temperature Range Symbol VCEO VCB VEB IC PD T stg Value 24 4B 4.
0 7.
0 100 571 -65 to +200 Unit Vdc Vdc Vdc Adc Watts mW/oC °c -Indicates JEDEC Registered Data.
This device IS designed for RF operation.
The total device dissipation rating applies onlv when the device is operated as an RF amplifier.
MILLIMETERS INCHES DIM MIN MAX MIN MAX A 12.
57 12.
90 8 10.
54 10.
80 C 21.
2...

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