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2N5861

Part Number	2N5861
Manufacturer	ETC
Description	NPN SILICON ANNULAR MEMORY DRIVER TRANSISTOR
Published	Jul 13, 2018
Detailed Description	2N5861 (SILICON) NPN SILICON ANNULAR MEMORY DRIVER . designed for medium·current, high·speed switching applications. Id...
Datasheet	2N5861 PDF File

Overview

2N5861 (SILICON) NPN SILICON ANNULAR MEMORY DRIVER .
designed for medium·current, high·speed switching applications.
Ideally suited for ferrite core memory driver circuits.
• Collector·Emitter Breakdown Voltage BVCEO ~ 50 Vdc (Min) @ IC ~ 10 mAdc • Low Coliector·Emitter Saturation Voltage VCE(sat) ~ 0.
5 Vdc (Max) @ IC ~ 500 mAdc • Low Coliector·Base Capacitance Ccb ~ 7.
0 pF (Max) @ VCB ~ 10 Vdc • Fast Switching Times@ IC ~ 500 mAdc -ton ~ 25 ns (Max) toft ~ 60 ns (Max) NPN SILICON MEMORY DRIVER TRANSISTOR 'MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous Total Device Dissipation @TA ::::; 25°C Derate above 25°C Total Device Dissipation @TC =25°C Derate above 25°C Operating and Storage Junction Temperature Range *Indlcates JEDEC RegIstered Data Symbol VCEO VCB VEB IC Po Po TJ,T stg Value 50 100 6.
0 2.
0 1.
0 6.
0 5.
0 28.
6 -65 to +200 Unit Vdc Vdc Vdc Adc Watts mW/oC Watts mW/oC °c MILLIMETER...

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