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2N5864

Part Number	2N5864
Manufacturer	ETC
Description	PNP SILICON ANNULAR TRANSISTOR
Published	Jul 13, 2018
Detailed Description	2N5864 (SILICON) PNP SILICON ANNULAR TRANSISTOR · .. designed for use in general-purpose amplifier and medium-speed swi...
Datasheet	2N5864 PDF File

Overview

2N5864 (SILICON) PNP SILICON ANNULAR TRANSISTOR · .
.
designed for use in general-purpose amplifier and medium-speed switching applications.
• High·Coliector·Emitter Breakdown Voltage- BVCEO = 70 Vdc (Mini @ IC = 10 mAdc • DC Current Gain Specified - 10 mA to 500 mA • High.
Coliector Current - IC = 1.
5 Adc Continuous PNPSILICON GENERAL-PURPOSE TRANSISTOR 'MAXIMUM RATINGS Rating Collector~Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous Total Power Dissipation @ TA = 25°C Derate above 25°C Total Power Dissipation @ TC = 25°C Derate above 25°C Operating and Storage Junction Temperature Range Symbol VCEO VCB VEB IC Po Po TJ.
Tstg Value 70 90 5.
0 1.
5 1.
25 7.
15 8.
75 50 -65 to +200 ·1 ndicates JEDEC Registered Data • ·Motorola Guarantees this data in addition to JEOEC Registered Data.
Unit Vdc Vdc Vdc Adc Watts mW/oC Watts mW/oC °c Pin 1.
Emitter 2.
Bast! 3.
Collector l~r::R::~I: Ac re--- Lt / _:::::::.
u K _---.
J.
SEATING PLA...

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