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2N5865

ETC
Part Number 2N5865
Manufacturer ETC
Description PNP SILICON ANNULAR TRANSISTOR
Published Jul 13, 2018
Detailed Description 2N5865 (SILICON) PNP SILICON ANNULAR TRANSISTOR· . designed where high·current, high·voltage conditions are require· me...
Datasheet PDF File 2N5865 PDF File

2N5865
2N5865

Overview
2N5865 (SILICON) PNP SILICON ANNULAR TRANSISTOR· .
designed where high·current, high·voltage conditions are require· ments for general·purpose switching and amplifier applications.
• Collector·Emitter Breakdown Voltage BVCEO = 50 Vdc (Min) @ IC = 10 mAdc • DC Current Gain Specified - 1.
0 mA to 500 mA • Turn·On Time .
.
ton = 120 ns (Max) @ IC = 500 mAdc PNPSILICON GENERAL-PURPOSE TRANSISTOR >MAXIMUM RATINGS Rating Collector·Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous Total Device Dissipation@TA==2SoC Derate above 2SoC Total Device Dissipation @TC == 2SoC Derate above 25°C Operating and Storage Junction Temperature Range *Indicates JEDEC Registered Data.
Symbol VCEO VCB VEB IC Po Po TJ,Tstg Value 50 70 5.
0 1.
0 1.
25 7.
15 7.
0 40 ·65 to +200 Unit Vdc Vdc Vdc Adc Watts mW/oC Watts mW/oC °c Pm 1 Emitter 2 ,,_ 3 Collector MILLIMETERS DIM MIN MAX A B.
B9 9.
40 B B.
OO B.
51 C 6.
10 6.
60 0 0.
406 0.
533 E 0.
229 3.
1B F 0.
406 0.
4B3 G...


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