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S2000 Datasheet PDF


Part Number S2000
Manufacturer Toshiba
Title Silicon NPN Transistor
Description S2000 SILICON NPNTRIPLE DIFFUSED MESA TYPE COLOR TV HORIZONTAL OUTPUT APPLICATIONS. COLOR TV SWITCHING REGULATOR APPLICATIONS. FEATURES . High...
Features . High Voltage : VCES=1500V . Low Saturation Voltage : VcE(sat)=5V (Max.) . Fall Time : t f =0.7/ts (Typ.) . Glass Passivated Collector-Base Junction Unit in mm 1&0MAX. 03.6±12 , MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector-Emitter Voltage Emitter-Base Voltage Collector Current DC ...

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S2000 : ·High Breakdown Voltage- : VCBO= 1500V (Min) ·High Switching Speed ·Low Saturation Voltage ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Color TV horizontal output applications ·Color TV switching regulator applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1500 V VCEO Collector-Emitter Voltage 700 V VEBO Emitter-Base Voltage 5 V IC Collector Current 8 A ICM Collector Current-peak 15 A IB Base Current PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 4 A 125 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ S2000 isc website: www.iscs.

S2000 : ·With TO-3PH package ·High voltage ,high speed ·Low collector saturation voltage APPLICATIONS ·Color TV horizontal output applications ·Color TV switching regulator applications PINNING(See Fig.2). PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (TO-3PH) and symbol DESCRIPTION ABSOLUTE MAXIMUM RATINGS(TC=25 ) SYMBOL VCBO VCEO VEBO IC ICM IB PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Base current Collector power dissipation Junction temperature Storage temperature TC=25 Open emitter Open base Open collector CONDITIONS VALUE 1500 700 5 8 15 4 125 150 -55~150 UNIT V V V.

S2000A : SILICON NPN TRIPLE DIFFUSED MESA TYPE COLOR TV HORIZONTAL OUTPUT APPLICATIONS. COLOR TV SWITCHING REGULATOR APPLICATIONS. FEATURES . High Voltage : VCES=1500V . Low Saturation Voltage : VcE ( sat )=lV (Max.) . Fall Time : tf=0.7/is (Typ.) . Glass Passivated Collector-Base Junction Unit in mm rl&OMAX. Zta.6±Q.2 MAXIMUM RATINGS (Ta=25 C) CHARACTERISTIC Collector-Emitter Voltage Emitter-Base Voltage Collector Current DC Peak Base Current (Peak) Total Power Dissipation (Tc^95°C) Junction Temperature Storage Temperature Range Thermal Resistance SYMBOL VCES VEBO ic ICM L BM tot -stg R th(j-c) RATING 1500 7.5 12.5 +115 -55~ +115 1.6 UNIT 'C/W 1. BASE 2. COLLECTOR (HEAT SINK).

S2000A : ·With TO-3PH package ·High voltage ,high speed ·Low collector saturation voltage APPLICATIONS ·Color TV horizontal output applications ·Color TV switching regulator applications PINNING(See Fig.2) PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (TO-3PH) and symbol DESCRIPTION ABSOLUTE MAXIMUM RATINGS (TC=25 ) SYMBOL VCBO VCEO VEBO IC ICM IB PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Base current Collector power dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE 1500 700 5 8 15 4 125 150 -55~150 UNIT V V V.

S2000AF : The S2000AF is manufactured using Diffused Collector in Planar Technology adopting new and enhanced high voltage structure for updated performance to the Horizontal Deflection stage. Order codes Part Number S2000AF Marking S2000AF Package ISOWATT218FX Packaging Tube March 2007 Rev 1 1/8 www.st.com 8 This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice. Electrical ratings S2000AF 1 Electrical ratings Table 1. Symbol VCES VCEO VEBO IC ICM IB PTOT Vins Tstg TJ Absolute maximum rating Parameter Collector-emitter voltage (VBE = 0) Collector-emitter voltage (IB = 0) Collector-base voltage (IC = 0) Colle.

S2000AF : ·With TO-3P(H)IS package ·High voltage ·Fast switching APPLICATIONS ·Horizontal deflection for color TV PINNING PIN 1 2 3 DESCRIPTION Base Collector Emitter Fig.1 simplified outline (TO-3P(H)IS) and symbol ABSOLUTE MAXIMUM RATINGS (TC=25 ) SYMBOL VCBO VCEO VEBO IC ICM PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Collector power dissipation Junction temperature Storage temperature TC=25 Open emitter Open base Open collector CONDITIONS VALUE 1500 700 10 8 15 50 150 -55~150 UNIT V V V A A W THERMAL CHARACTERISTICS SYMBOL Rth j-C PARAMETER Thermal resistance from junction to case VALUE 2.5 UNIT /W SavantIC .

S2000AF1 : h TO-3P(H)IS package ·High voltage ·Fast switching APPLICATIONS ·Horizontal deflection for color TV PINNING PIN 1 2 3 DESCRIPTION Base Collector Emitter Fig.1 simplified outline (TO-3P(H)IS) and symbol ABSOLUTE MAXIMUM RATINGS (TC=25 ) SYMBOL VCBO VCEO VEBO IC ICM PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Collector power dissipation Junction temperature Storage temperature TC=25 Open emitter Open base Open collector CONDITIONS VALUE 1500 700 10 8 15 50 150 -55~150 UNIT V V V A A W THERMAL CHARACTERISTICS SYMBOL Rth j-C PARAMETER Thermal resistance from junction to case VALUE 2.5 UNIT /W SavantIC Sem.

S2000AFI : The S2000AFI is manufactured using Multiepitaxial Mesa technology for cost-effective high performance and uses a Hollow Emitter structure to enhance switching speeds. 1 3 2 ISOWATT218 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol V CES V CEO V EBO IC I CM P t ot T stg Tj Parameter Collector-Emitter Voltage (V BE = 0) Collector-Emitter Voltage (I B = 0) Emitter-Base Voltage (I C = 0) Collector Current Collector Peak Current (tp 5 ms) Total Dissipation at T c = 25 C St orage Temperature Max. Operating Junction Temperature o Value 1500 700 10 8 15 50 -65 to 150 150 Unit V V V A A W o o C C 1/6 December 1999 S2000AFI THERMAL DATA R t hj-ca se Thermal Resistance Junction-c.

S2000N : S2000N TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE S2000N COLOR TV HORIZONTAL OUTPUT APPLICATIONS COLOR TV SWITCHING REGULATOR APPLICATIONS Unit: mm z High Voltage : VCES = 1500 V z High Speed : tf = 0.7μs (Max.) z Low Saturation Voltage : VCE (sat) = 5 V (Max.) z Collector Metal (Fin) is Fully Covered with Mold Resin. ABSOLUTE MAXIMUM RATINGS (Tc = 25°C) CHARACTERISTICS SYMBOL RATING UNIT Collector−Emitter Voltage VCES 1500 V Emitter−Base Voltage VEBO 5 V Collector Current DC Pulse IC ICP 8 A 15 Base Current IB 4 A Collector Power Dissipation Junction Temperature Storage Temperature Range Thermal Resistance PC Tj Tstg Rth (j−c) 50 150 −55~150 2.5 W .

S2000N : ·With TO-3P(H)IS package ·High voltage,high speed ·Low collector saturation voltage APPLICATIONS ·Color TV horizontal output applications ·Color TV switching regulator applications PINNING PIN 1 2 3 DESCRIPTION Base Collector Emitter Fig.1 simplified outline (TO-3P(H)IS) and symbol ABSOLUTE MAXIMUM RATINGS (TC=25 ) SYMBOL VCBO VCEO VEBO IC ICM IB PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Base current Collector power dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE 1500 700 5 8 15 4 50 150 -55~150 UNIT V V V A A A W THERMAL CHARACTERISTIC.

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S2005 : SILICON DIFFUSED POWER TRANSISTOR Highvoltage,high-speed switching npn transistors in a plastic envelope with integrated efficiency diode , primarily for use in horizontal deflection circuites of colour television receivers QUICK REFERENCE DATA SYMBOL TO-3PH CONDITIONS VBE = 0V MIN MAX 1500 600 8 15 125 1.5 2.0 1.0 UNIT V V A A W V A V s VCESM VCEO IC ICM Ptot VCEsat Icsat VF tf PARAMETER Collector-emitter voltage peak value Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Total power dissipation Collector-emitter saturation voltage Collector saturation current Diode forward voltage Fall time Tmb 25 IC = 4.5A; IB = 2.0A f = 16KHz IF=4.0A IC=4.5.

S2005A : SILICON DIFFUSED POWER TRANSISTOR Highvoltage,high-speed switching npn transistors in a plastic envelope with integrated efficiency diode , primarily for use in horizontal deflection circuites of colour television receivers QUICK REFERENCE DATA SYMBOL TO-3PH CONDITIONS VBE = 0V MIN MAX 1500 600 8 15 125 1.5 2.0 1.0 UNIT V V A A W V A V s VCESM VCEO IC ICM Ptot VCEsat Icsat VF tf PARAMETER Collector-emitter voltage peak value Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Total power dissipation Collector-emitter saturation voltage Collector saturation current Diode forward voltage Fall time Tmb 25 IC = 4.5A; IB = 2.0A f = 16KHz IF=4.0A IC=4.5.

S2005AF : SILICON DIFFUSED POWER TRANSISTOR Highvoltage,high-speed switching npn transistors in a plastic envelope with integrated efficiency diode , primarily for use in horizontal deflection circuites of colour television receivers QUICK REFERENCE DATA SYMBOL TO-3PM CONDITIONS VBE = 0V MIN MAX 1500 600 8 15 125 1.5 2.0 1.0 UNIT V V A A W V A V s VCESM VCEO IC ICM Ptot VCEsat Icsat VF tf PARAMETER Collector-emitter voltage peak value Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Total power dissipation Collector-emitter saturation voltage Collector saturation current Diode forward voltage Fall time Tmb 25 IC = 4.5A; IB = 2.0A f = 16KHz IF=4.0A IC=4.5.




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