DatasheetsPDF.com

2SK356

Toshiba
Part Number 2SK356
Manufacturer Toshiba
Description N-Channel Transistor
Published Jul 16, 2018
Detailed Description 2SK356 SILICON N CHANNEL MOS TYPE (7T-MOS) HIGH SPEED, HIGH VOLTAGE SWITCHING APPLICATIONS. SWITCHING REGULATOR, DC-DC...
Datasheet PDF File 2SK356 PDF File

2SK356
2SK356

Overview
2SK356 SILICON N CHANNEL MOS TYPE (7T-MOS) HIGH SPEED, HIGH VOLTAGE SWITCHING APPLICATIONS.
SWITCHING REGULATOR, DC-DC CONVERTER AND MOTOR DTIVE APPLICATIONS.
FEATURES .
Low Drain-Source ON Resistance : RdS(ON)=0- 2Q(Typ .
.
High Forward Transfer Admittance : ] Yf s | =6S (Typ .
.
Low Leakage Current : IcsS^OOnACMax.
) @ Vgs=±20V .
Enhancement-Mode lDSS=lmA(Max.
) @ VDS=250V : Vfj^l .
5 ~ 3.
5V @ lD=lmA INDUSTRIAL APPLICATIONS Unit in mm 02 5.
0 MAX MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC SYMBOL RATING UNIT Drain-Source Voltage VDSX 250 Gate-Source Voltage VgSS ±20 Drain Current DC Pulse Drain Power Dissipation (Tc=25°C) Channel Temperature Storage Temperature Range ID idp Pd Teh -stg ELECTRICAL CHARACTERISTICS (Ta=25°C) 12 30 120 150 -65-150 °C °C 1.
GATE 2.
SOURCE DRAIN (CASE) TO- 2 4MA/TO-3 EIA J TC-3 , TB-3 TOSHIBA 2-21E1B Weight : 15.
CHARACTERISTIC SYMBOL TEST CONDITION MIN.
TYP.
MAX.
UNIT Gate Leakage Current IGSS Drain Cut-off Cur...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)