DatasheetsPDF.com

2SD844

Toshiba
Part Number 2SD844
Manufacturer Toshiba
Description NPN Transistor
Published Jul 16, 2018
Detailed Description I: . SILICON NPN TRIPLE DIFFUSED TYPE HIGH CURRENT SWITCHING APPLICATIONS. POWER AMPLIFIER APPLICATION. FEATURES • High...
Datasheet PDF File 2SD844 PDF File

2SD844
2SD844

Overview
I: .
SILICON NPN TRIPLE DIFFUSED TYPE HIGH CURRENT SWITCHING APPLICATIONS.
POWER AMPLIFIER APPLICATION.
FEATURES • High Collector Current : I C=7A • Low Collector Saturation Voltage : v CE(sat) =0 - 4v (Max -) (at I C =4A) • High Power dissipation : P C=60W (at Tc=25°C) .
Complementary to 2SB754.
I5.
9MAX Unit in mm 0Z.
2±O.
2 MAXIMUM RATINGS (Ta=25 °C) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Emitter Current Collector Power Dissipation Junction Temperature Ta=25°C Tc=25°C Storage Temperature Range SYMBOL VCBO VCEO VEBO ic XE pc Tj Tstg RATING 50 50 5 7 -7 2.
5 60 150 -55M.
50 UNIT V V V A 1.
BASE 2.
COLLECTOR (HEAT SINK) A S EMITTER W °C TOSHIBA °c Z - 16 B 1 A ELECTRICAL CHARACTERISTICS (Ta=25°C) CHARACTERISTIC Collector Cut-off Current Emitter Cut-off Current Collector- Emitter Breakdown Voltage SYMBOL I CBO lEBO v (BR)CE0 TEST CONDITION VCB=50V, I E=0 VEB=5V, I C=0 IC=50mA, Ib=0 Emitter-Base...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)