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2SD1052

Toshiba
Part Number 2SD1052
Manufacturer Toshiba
Description NPN Transistor
Published Jul 16, 2018
Detailed Description 2SD1052 SILICON NPN TRIPLE DIFFUSED TYPE (PCT PROCESS) AUDIO FREQUENCY POWER AMPLIFIER APPLICATIONS . FEATURES : . Hig...
Datasheet PDF File 2SD1052 PDF File

2SD1052
2SD1052

Overview
...h DC Current Gain of 250 to 750 at VCE=5V, I C =0.
5A .
Low VcE(sat) of 1.
0V (MAX.
) at Ic=lA, Ib=0.
02A .
Collector Power Dissipation of 30W at Tc=25°C Unit in mm 10.
3MAX ^3.
6±Q2 MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current VCBO VCEO vEB0 50 V 50 Base Current Collector Power Dissipation Ta=25°C Tc=25°C Junction Temperature Storage Temperature Range IB T-i Tstg 0.
5 1.
BASE 1.
5 2.
collector Cheat sink) 3.
EMITTER 30 JEDEC 150 °C EIAJ TO— 220AB SC—46 -55-150 °C TOSHIBA 2-10A1A ELECTRICAL CHARACTERISTICS (Ta=25°C) Mounting kit No.
AC75 Weight : L9g CHARACTERISTIC Collector C...


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