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2SD1088

Toshiba
Part Number 2SD1088
Manufacturer Toshiba
Description NPN Transistor
Published Jul 16, 2018
Detailed Description SILICON NPN TRIPLE DIFFUSED TYPE (DARLINGTON POWER) IGNITER APPLICATIONS. HIGH VOLTAGE SWITCHING APPLICATIONS. FEATURES...
Datasheet PDF File 2SD1088 PDF File

2SD1088
2SD1088

Overview
SILICON NPN TRIPLE DIFFUSED TYPE (DARLINGTON POWER) IGNITER APPLICATIONS.
HIGH VOLTAGE SWITCHING APPLICATIONS.
FEATURES .
High DC Current Gain : hFE=2000(Min.
) (Vce=2V, Ic=2A) INDUS 1K1AL AMPLICATIONS Unit in mm 10.
3MAX.
03.
6±O.
2 MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage vCBO 300 V Collector-Emitter Voltage VCEO 250 V Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation (Tc=25°C) Junction Temperature Storage Temperature Range EQUIVALENT CIRCUIT VEBO ic IB PC TJ Tstg 5 6 1 30 150 -55~150 COLLECTOR > V X A 2.
5 4 2.
5 4 > A C*| lOl i %==_!]?.
3 W J— <# .
0* °C 1.
BASE °c 2.
COLLECTOR ("HEAT SINK) 3.
EMITTER TO-220AB BASE' H£ II AC75 Weight : L9g ELECTRICAL CHARACTERISTICS (Ta=25 c) CHARACTERISTIC SYMBOL TEST CONDITION Collector Cut-off Current ICB0 V CB=300V, I E=0 Emitter Cut-off Current lEBO VEB=5V, I C=0 Collector-Emitter Volt...


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