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2SC2564

Part Number	2SC2564
Manufacturer	Toshiba
Description	Silicon NPN Transistor
Published	Jul 17, 2018
Detailed Description	SILICON NPN EPITAXIAL TYPE (PCT PROCESS) POWER AMPLIFIER APPLICATIONS. FEATURES • High Breakdown Voltage : VCEO=140V • ...
Datasheet	2SC2564 PDF File

Overview

SILICON NPN EPITAXIAL TYPE (PCT PROCESS) POWER AMPLIFIER APPLICATIONS.
FEATURES • High Breakdown Voltage : VCEO=140V • High Transition Frequency : fT=90MHz (Typ.
) • Complementary to 2SA1094.
• Recommended for 80W High-Fidelity Audio Frequency Amplifier Output Stage.
34.
3MAX.
Unit in mm MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Emitter Current Collector Power Dissipation (Tc=25°C) Junction Temperature Storage Temperature Range SYMBOL V,CBO VCEO v EBO PC stg RATING 140 140 12 -12 120 150 -55vL50 UNIT °C *fe^W^S 1.
BASE 2.
COLLECTOR(HEAT SINK) 3.
EMITTER Weight : 10.
34 A 1 A ELECTRICAL CHARACTERIS...

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