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2SA1329

Part Number	2SA1329
Manufacturer	Toshiba
Description	SILICON PNP TRANSISTOR
Published	Jul 17, 2018
Detailed Description	:) SILICON PNP EPITAXIAL TYPE (PCT PROCESS) HIGH CURRENT SWITCHING APPLICATIONS. FEATURES . Low Collector Saturation Vo...
Datasheet	2SA1329 PDF File

Overview

:) SILICON PNP EPITAXIAL TYPE (PCT PROCESS) HIGH CURRENT SWITCHING APPLICATIONS.
FEATURES .
Low Collector Saturation Voltage : VCE ( sat )=-0.
4V(Max.
) at I C=-6A .
High Speed Switching Time : t st g=l.
0As(Typ.
.
Complementary to 2SC3346 Unit in mm 10.
3MAX.
^3.
6ia2 MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector-Base Voltage SYMBOL VCBO RATING -80 UNIT 2.
5 4 2.
5 4 X Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation (Tc=25°C) Junction Temperature Storage Temperature Range VcEO v EBO ic IB PC stg ELECTRICAL CHARACTERISTICS (Ta=25 C) CHARACTERISTIC SYMBOL Collector Cut-off Current I CBO Emitter Cut-off Current lEBO -...

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