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2SB553

Part Number	2SB553
Manufacturer	Toshiba
Description	SILICON PNP TRANSISTOR
Published	Jul 17, 2018
Detailed Description	: SILICON PNP TRIPLE DIFFUSED TYPE (PCT PROCESS) HIGH CURRENT SWITCHING APPLICATIONS. POWER AMPLIFIER APPLICATIONS. IN...
Datasheet	2SB553 PDF File

Overview

: SILICON PNP TRIPLE DIFFUSED TYPE (PCT PROCESS) HIGH CURRENT SWITCHING APPLICATIONS.
POWER AMPLIFIER APPLICATIONS.
INDUSTRIAL APPLICATIONS Unit in mm 10.
3 MAX.
3.
6 ±0.
2 FEATURES • Low Collector Saturation Voltage : VcE(sat)=-0.
4V (Max.
) at Ic=-4A • Complementray to 2SD553.
MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Ta=25°C Dissipation Tc=25°C Junction Temperature Storage Temperature Range VCBO VCEO v EBO ic Tstg -70 -50 -5 -7 1.
5 40 150 -55^150 V °C °C 1.
BASE 2.
COLLECTOR (HEAT SINK; 3.
EMITTER JEDEC EIAJ TOSHIBA TO-220AB SC— 46 2— 10A1A ELECTRICAL ...

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