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2SB595

Toshiba
Part Number 2SB595
Manufacturer Toshiba
Description SILICON PNP TRANSISTOR
Published Jul 17, 2018
Detailed Description SILICON PNP TRIPLE DIFFUSED TYPE (PCT PROCESS) POWER AMPLIFIER APPLICATIONS. FEATURES • High Breakdown Voltage : VCEO=...
Datasheet PDF File 2SB595 PDF File

2SB595
2SB595

Overview
SILICON PNP TRIPLE DIFFUSED TYPE (PCT PROCESS) POWER AMPLIFIER APPLICATIONS.
FEATURES • High Breakdown Voltage : VCEO=-100V • Low Collector-Emitter Saturation Voltage : VCE(sat)=-2.
0V(Max.
) • Complementary to 2SD525.
• Recommended for 30W High-Fidelity Audio Frequency Amplifier Output Stage.
MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC SYMBOL Collector-Base Voltage Collector-Emitter Voltage Emitter- Base Voltage VcBO VCEO VEBO Collector Current ic Emitter Current IE Base Current Collector Power Dissi- pation (T C =25°C) Junction Temperature Storage Temperature Ranee IB PC Tstg RATING -100 -100 -5 -5 -4 40 150 -55 ^150 UNIT V °C 10.
3 MAX.
Unit in mm 03.
6±O.
2 1.
BASE 2.
COLLECTOR (HEAT SINK) 3.
EMITTER JEDEC EIAJ TOSHIBA TO-220AB Mounting Kit No.
AC75 Weight : 1.
9g ELECTRICAL CHARACTERISTICS (Ta==25°C ) CHARACTERISTIC Collector Cut-off Current Emitter Cut-off Current Collector-Emitter Breakdown Voltage SYMBOL ICBO lEBO V (BR) CEO TEST CONDITION VC B=-100...


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