DatasheetsPDF.com

2SB992 Datasheet PDF

Toshiba
Part Number 2SB992
Manufacturer Toshiba
Title SILICON PNP TRANSISTOR
Description 2SB992 SILICON PNP TRIPLE DIFFUSED TYPE (PCT PROCESS) HIGH CURRENT SWITCHING APPLICATIONS. POWER AMPLIFIER APPLICATIONS. FEATURES . High Collect...
Features . High Collector Current : Ic=-7A . Low Collector Saturation Voltage : V CE ( sat )=-0.5V(Max.) (at I C=-4A) . High Collector Power Dissipation : Pc=40W (at Tc=25°C) . Complementary to 2SD1362 INDUSTRIAL APPLICATIONS Unit in mm 1CX3MAX. 03.2±O.2 MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC SYMBOL Co...

File Size 131.12KB
Datasheet PDF File 2SB992 PDF File


2SB992 2SB992 2SB992




Similar Ai Datasheet

2SB900 : ·With TO-220C package ·Low collector saturation voltage ·Wide area of safe operation APPLICATIONS ·For power amplifier and switching applications PINNING PIN 1 2 3 Emitter Collector;connected to mounting base Base Fig.1 simplified outline (TO-220) and symbol DESCRIPTION Absolute maximum ratings(Ta=25 ) SYMBOL VCBO VCEO VEBO IC PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current (DC) Collector dissipation Junction temperature Storage temperature TC=25 Open emitter Open base Open collector CONDITIONS VALUE -50 -50 -5 -4 40 150 -50~150 UNIT V V V A W SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon PNP Power Tr.

2SB900 : ·Collector-Emitter BreakdownVoltage- : V(BR)CEO= -50V(Min.) ·Low Collector Saturation Voltage- : VCE(sat)= -1.0(Max.) @IC= -2A ·Wide area of safe operation ·Good Linearity of hFE ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for power amplifier and switching applications . ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -50 V VCEO Collector-Emitter Voltage -50 V VEBO Emitter-Base Voltage -6 V IC Collector Current-Continuous -4 A ICM Collector Current-Peak -6 A PC Collector Power Dissipation@TC=25℃ 40 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature .

2SB901 : ·Collector-Emitter BreakdownVoltage- : V(BR)CEO= -60V(Min.) ·Low Collector Saturation Voltage- : VCE(sat)= -1.0(Max.) @IC= -2A ·Wide area of safe operation ·Good Linearity of hFE ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for power amplifier and switching applications . ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -60 V VCEO Collector-Emitter Voltage -60 V VEBO Emitter-Base Voltage -6 V IC Collector Current-Continuous -4 A ICM Collector Current-Peak -6 A PC Collector Power Dissipation@TC=25℃ 40 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature .

2SB902 : Free Datasheet http://www.datasheet4u.com/ Free Datasheet http://www.datasheet4u.com/ Free Datasheet http://www.datasheet4u.com/ Free Datasheet http://www.datasheet4u.com/ Free Datasheet http://www.datasheet4u.com/ Free Datasheet http://www.datasheet4u.com/ .

2SB903 : Ordering number:990C PNP/NPN Epitaxial Planar Silicon Transistors 2SB903/2SD1212 30V/12A High-Speed Switching Applications Applications · Suitable for relay drivers, high-speed inverters, converters, and other general large-current switching applications. Features · Low collector-to-emitter saturation voltage : VCE(sat)=(–)0.5V (PNP), 0.4V (NPN) max. · Large current capacity. Package Dimensions unit:mm 2010C [2SB903/2SD1212] ( ) : 2SB903 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Symbol VCBO VCEO VEBO IC ICP PC Junction .

2SB903 : ·With TO-220 package ·Low collector saturation voltage ·Large current capacity. ·Complement to type 2SD1212 APPLICATIONS ·Suitable for relay drivers, high-speed inverters,converters, and other genral large current switching applications. ·High-speed switching applications PINNING PIN 1 2 3 Emitter Collector;connected to mounting base Base DESCRIPTION 2SB903 Fig.1 simplified outline (TO-220) and symbol Absolute maximum ratings (Ta=25 ) SYMBOL VCBO VCEO VEBO IC ICM PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Open emitter Open base Open collector CONDITIONS VALUE -60 -30 -6 -12 -20 1.75 PC Collector power dissipatio.

2SB903 : ·High Collector Current: IC= -12A ·Low Collector Saturation Voltage : VCE(sat)= -0.5V(Max)@IC= -5A ·Complement to Type 2SD1212 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for relay drivers, high-speed inverters, converters, and other general large-current switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -60 V VCEO Collector-Emitter Voltage -30 V VEBO Emitter-Base Voltage -6 V IC Collector Current-Continuous -12 A ICM Collector Current-Peak Total Power Dissipation @ TC=25℃ PC Total Power Dissipation @ Ta=25℃ TJ Junction Temperature -20 A 35.

2SB904 : Ordering number:1022A PNP/NPN Epitaxial Planar Silicon Transistors 2SB904/2SD1213 30V/12A High-Speed Switching Applications Applications · Large current switching of relay drivers, high-speed inverters, converters. Features · Low collector-to-emitter saturation voltage : VCE(sat)=–0.5V (PNP), 0.4V (NPN) max. · Large current capacity. Package Dimensions unit:mm 2022A [2SB904/2SD1213] ( ) : 2SB904 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Symbol VCBO VCEO VEBO IC ICP PC Junction Temperature Storage Temperature Tj Tstg E.

2SB904 : ·With TO-3PN package ·Complement to type 2SD1213 ·Low collector saturation voltage ·Large current capacity APPLICATIONS ·Large current switching of relay drivers, high-speed inverters,converters PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (TO-3PN) and symbol DESCRIPTION Absolute maximum ratings(Tc=25 ) SYMBOL VCBO VCEO VEBO IC ICM PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak TC=25 PC Collector power dissipation Ta=25 Tj Tstg Junction temperature Storage temperature 2.5 150 -55~150 CONDITIONS Open emitter Open base Open collector VALUE -60 -30 -6 -20 -30 60 W UNIT V V .

2SB904 : ·High Collector Current:IC= -20A ·Low Collector Saturation Voltage : VCE(sat)=- 0.5V(Max)@IC= 8A ·Complement to Type 2SD1213 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for large current switching of relay drivers, high-speed inverters,converters applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -60 V VCEO Collector-Emitter Voltage -30 V VEBO Emitter-Base Voltage -6 V IC Collector Current-Continuous -20 A ICM Collector Current-Peak PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature -30 A 60 W 150 ℃ Tstg Storage Temperature Range -.

2SB905 : TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SB905 2SB905 Power Amplifier Applications • Complementary to SD1220 Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Ta = 25°C Tc = 25°C Junction temperature Storage temperature range VCBO VCEO VEBO IC IB PC Tj Tstg −150 −150 −6 −1.5 −1.0 1.0 10 150 −55 to 150 V V V A A W °C °C Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in.

2SB906 : .

2SB906 : SMD Type Silicon PNP Epitaxial 2SB906 TO-252 +0.15 1.50 -0.15 Transistors Features Low collector saturation voltage. High power dissipation. Unit: mm 2.30 +0.8 0.50-0.7 +0.1 -0.1 6.50 +0.2 5.30-0.2 +0.15 -0.15 +0.2 9.70 -0.2 +0.1 0.80-0.1 +0.15 0.50 -0.15 0.127 max 2.3 +0.15 4.60-0.15 +0.1 0.60-0.1 +0.28 1.50 -0.1 +0.25 2.65 -0.1 +0.15 5.55 -0.15 1 Base 2 Collector 3 Emitter Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range Symbol VCBO VCEO VEBO IC IB PC Tj Tstg Rating -60 -60 -7 -3 -0.5 1 150 -55 to +150 Unit.

2SB906 : Product specification 2SB906 TO-252 +0.15 1.50 -0.15 Features Low collector saturation voltage. High power dissipation. Unit: mm 2.30 +0.8 0.50-0.7 +0.1 -0.1 6.50 +0.2 5.30-0.2 +0.15 -0.15 +0.2 9.70 -0.2 +0.1 0.80-0.1 +0.15 0.50 -0.15 0.127 max 2.3 +0.15 4.60-0.15 +0.1 0.60-0.1 +0.28 1.50 -0.1 +0.25 2.65 -0.1 +0.15 5.55 -0.15 1 Base 2 Collector 3 Emitter Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range Symbol VCBO VCEO VEBO IC IB PC Tj Tstg Rating -60 -60 -7 -3 -0.5 1 150 -55 to +150 Unit V V V mA mA mW Elec.

2SB907 : .

2SB908 : .

2SB909M : .




Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)