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2SA1307

Part Number	2SA1307
Manufacturer	Toshiba
Description	Silicon PNP Transistor
Published	Jul 17, 2018
Detailed Description	:) SILICON PNP EPITAXIAL TYPE (PCT PROCESS) HIGH CURRENT SWITCHING APPLICATIONS. 1Q.3MAX. FEATURES . Low Saturation V...
Datasheet	2SA1307 PDF File

Overview

:) SILICON PNP EPITAXIAL TYPE (PCT PROCESS) HIGH CURRENT SWITCHING APPLICATIONS.
1Q.
3MAX.
FEATURES .
Low Saturation Voltage : VCE ( sat )=-0.
4V(Max,) at I C=-3A .
High Speed Switching Time : t stg =l .
0As(Typ.
.
Complementary to 2SC3299 MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector-Base Voltage SYMBOL VCBO RATING -60 UNIT 7.
0 " 03.
2 ±0.
2 4 Vt-ja s M -k J 01 -H x' to H 1 1.
4 + 0.
25 11 a76-ai5 1 _2.
54±0.
25 • 1 .
1.
2 2.
54±C125 \ a a H Collector-Emitter Voltage Emitter-Base Voltage Collector Current VCEO VEBO ic -50 -5 -5 + 1 !I! 1 2 31 Base Current Collector Power Ta=25°C Tc=25 u C IB -1 2.
0 20 1.
BASE 2.
COLLECTOR 3.
EMITTER Junction Temperature Storage Temp...

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