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PRODUCT SUMMARY
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N-Channel P-Channel
30
0. at VGS = 10 V 0. at VGS = 4. 5 V
- 30
0. at VGS = - 10 V 0. at VGS = - 4. 5 V
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FEATURES
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• TrenchFET® Power MOSFET
• 100 % Rg Tested • Compliant to RoHS Directive 2002/95/EC
G1 3 mm S2
G2
7623 7RS9LHZ 16 25 34 2. 85 mm
D1 S1 D2
D1 S2
G2 G1
S1 N-Channel MOSFET
D2 P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
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Drain-Source Voltage
VDS 30 - 30
Gate-Source Voltage Continuous Drain Current (TJ = 150 °C)a, b
TA = 25 °C TA = 70 °C
VGS ID
± 20 . . 0
± 20 - . - . 2
Pulsed Drain Current
IDM 8
-7
Continuous Source Current (Diode Conduction)a, b
IS 1. 05 - 1. 05
Maximum Power Dissipationa, b
TA = 25 °C TA = 70 °C
PD
1. 15 0. 73
Operating Junction and Storage Temp...