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MSS30-248-H30

MA-COM
Part Number MSS30-248-H30
Manufacturer MA-COM
Description Low Barrier Silicon Schottky Diodes
Published Jul 20, 2018
Detailed Description MSS30-xxx-x Series Low Barrier Silicon Schottky Diodes Features  VF, RD and CJ Matching Options  Chip, Beam Lead and P...
Datasheet PDF File MSS30-248-H30 PDF File

MSS30-248-H30
MSS30-248-H30

Overview
MSS30-xxx-x Series Low Barrier Silicon Schottky Diodes Features  VF, RD and CJ Matching Options  Chip, Beam Lead and Packaged Devices  Hi-Rel Screening per MIL-PRF-19500 and MIL- PRF-38534 Available Description The MSS30-xxx-x Series of Schottky diodes are fabricated on N-Type epitaxial substrates using proprietary processes that yield the highest FCOs in the industry.
Optimum mixer performance is obtained with LO power of -3 dBm to +3 dBm per diode.
Rev.
V1 Chip Electrical Specifications: TA = 25°C Model Configuration MSS30-046-C15 Single Junction VF Typ.
V 0.
29 MSS30-050-C15 Single Junction 0.
27 Test Conditions IF = 1 mA VBR Min.
V 2 CJ Typ.
/ Max.
pF 0.
10 / 0.
12 2 0.
15 / 0.
18 IR = 10 µA VR = 0 V F = 1 MHz RS Typ.
Ω 10 6 RD Max.
Ω 18 15 I = 5 mA FCO Typ.
GHz 160 175 Outline C15 C15 Beam Lead Electrical Specifications: TA = 25°C Model Configuration MSS30-142-B10B Single Junction VF Typ.
V 0.
29 VBR Min.
V 2 CJ Typ.
/ Max.
pF 0.
07 / 0.
10 MSS30-...


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