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MSS39-152-B10B

MA-COM
Part Number MSS39-152-B10B
Manufacturer MA-COM
Description P-Type Silicon Schottky Diodes
Published Jul 20, 2018
Detailed Description MSS39-xxx-x Series P-Type Silicon Schottky Diodes Features  Very Low 1/f Noise  Detector Applications up to 40 GHz  C...
Datasheet PDF File MSS39-152-B10B PDF File

MSS39-152-B10B
MSS39-152-B10B

Overview
MSS39-xxx-x Series P-Type Silicon Schottky Diodes Features  Very Low 1/f Noise  Detector Applications up to 40 GHz  Chip Beam Lead and Packaged Devices Description The MSS39-xxx-x Series of Schottky diodes is fabricated on P-Type epitaxial substrates for superior 1/f noise performance in microwave biaseddetector applications up to 40 GHz.
Rev.
V1 Chip Electrical Specifications: TA = 25°C Model VBR Min.
V VF Typ.
V MSS39-045-C15 5 0.
40 CJ Max.
pF 0.
10 TSS Ttp.
dBm -58 ϓ Typ.
mV / mW 5,000 Frequency Max.
GHz 18 MSS39-048-C15 5 0.
39 0.
15 -58 5,000 12 Test Conditions IR = 10 µA IF = 1 mA VR = 0 V, DC Bias = 10 mA, F = 10 GHz F = 1 MHz RL = 100 KΩ Video BW = 2 MHz Outline C15 C15 Beam Lead Electrical Specifications: TA = 25°C Model VBR Min.
V VF Typ.
V MSS39-144-B10B 3.
5 0.
38 CJ Max.
pF 0.
08 TSS Ttp.
dBm -58 ϓ Typ.
mV / mW 5,000 Frequency Max.
GHz 40 MSS39-146-B10B 3.
5 0.
38 0.
10 -58 5,000 26 MSS39-148-B10B 3.
5 0.
39 0.
12 -58 5,000...


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